Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same

ABSTRACT

A semiconductor device structure and method for manufacture includes a substrate having a top first layer; a second thin transition layer located on top of the first layer; and, a third layer located on top of the transition layer, wherein the second thin transition layer provides strong adhesion and cohesive strength between the first and third layers of the structure. Additionally, a semiconductor device structure and method for manufacture includes an insulating structure comprising a multitude of dielectric and conductive layers with respective transition bonding layers disposed to enhance interfacial strength among the different layers. Further, an electronic device structure incorporates layers of insulating and conductive materials as intralevel or interlevel dielectrics in a back-end-of-the-line (“BEOL”) wiring structure in which the interfacial strength between different pairs of dielectric films is enhanced by a thin intermediate transition bonding layer.

RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.10/662,022, filed Sep. 12, 2003 now U.S. Pat. No. 7,067,437.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a semiconductor electronicdevice structure comprising SiCOH (carbon-doped oxides) layers havingimproved interfacial strength (adhesive and cohesive strength near theinterface) to other dielectric or conducting layers. The improvedinterfacial strength is caused by the presence of transition layers thatare formed between the SiCOH layers and the other dielectric orconducting layers. The transition layers are formed in the presentinvention by starting the deposition of a specific layer, while asurface preparation plasma is still present and active in the reactor.Furthermore, the present invention relates to a method for improving theinterfacial strength between different dielectric or conductive layersincluding those that include Si or C.

2. Description of the Prior Art

The continuous shrinking in dimensions of electronic devices utilized inULSI circuits in recent years has resulted in increasing the resistanceof the BEOL metallization without concomitantly decreasing theinterconnect capacitances. Often interconnects are even scaled to higheraspect ratios to mitigate the resistance increases, leading to increasedcapacitances. This combined effect increases signal delays in ULSIelectronic devices. In order to improve the switching performance offuture ULSI circuits, low dielectric constant (k) insulators andparticularly those with k significantly lower than silicon oxide arebeing introduced to reduce the capacitance.

The low-k materials that have been considered for applications in ULSIdevices include polymers containing Si, C, O, such as methylsiloxane,methylsilsesquioxanes, and other organic and inorganic polymers whichare fabricated by spin-on techniques or, Si, C, O and H containingmaterials (SiCOH, SiOCH, carbon-doped oxides (CDO), silicon-oxycarbides,organosilicate glasses (OSG)) deposited by plasma enhanced chemicalvapor deposition (PECVD) techniques. The incorporation of the low-kdielectrics in the interconnect structures of integrated circuits (IC)often requires the use of other dielectric materials as diffusionbarrier caps or etch-stop and chemo-mechanical polishing (CMP)hardmasks. The adhesion among the different layers in the complexstructures of an IC device is often too low, resulting in delaminationsduring the processing of the device, or reduced reliability in responseto thermomechanical stresses imposed by typical chip packagingmaterials. Often even when the adhesion is adequate, the deposited low-kfilm may possess degraded cohesive strength near the initial interfacethat is formed during deposition, and adhesion testing leads to fracturewithin this initial layer, which may be from single to single tens of nmthick. Without careful failure analysis, the low failure energies fromadhesion testing of such cases may be mistakenly attributed to poorinterfacial adhesion, rather than substandard cohesive strength of thenear-interface low-k film. This is especially true for interfacialstrength (adhesive and cohesive strength near the interface) of a carbondoped oxide dielectric comprised of Si, C, O and H (SiCOH) to otherhardmask or diffusion barrier cap dielectics, such as SiN, SiC(H) orSiCN(H).

It would thus be highly desirable to provide a semiconductor devicecomprising an insulating structure including a multitude of dielectricand conductive layers with good interfacial strength among the differentlayers, and a method for manufacturing such semiconductor devices.

As described in U.S. Pat. No. 4,647,494, amorphous silicon (a-Si), onthe order of tens of Angstroms thick, has been recognized for improvingadhesion of wear resistant carbon coatings to metallic magneticrecording layers in recording tapes and disks. That is, a-Si isdescribed in this prior art reference for improving adhesion betweenamorphous hydrogenated carbon (or diamondlike carbon) and silicideforming metals. Co-pending and co-assigned U.S. application Ser. No.10/174,748, filed on Jun. 19, 2002 describes semiconductor structureswherein the adhesion between different layers is improved using aninterfacial amorphous Si (a-Si) layer.

Despite the above use of a-Si, the adhesion between SiCOH interconnectdielectrics and other layers used in electronic device structures may beaffected by the initial layer produced during the deposition of theSiCOH film. The properties of the initial layer may be dependent on theprecursor used for the deposition of the film as well as the delay timebetween the initiation of the precursor flow into the reactor and theinitiation of the plasma. Moreover, the initial layer may have differentproperties than that of the bulk SiCOH film.

As described in U.S. Pat. No. 6,251,770, a first undoped orfluorine-doped initial silicon oxide layer with substantially no carboncan be deposited underneath the carbon-containing organosilicate layerto increase the reactive ion etch selectivity. The organosilicate layermay also include an initial graded region starting from no carbon andincreasing to a steady-state carbon level, to improve adhesion to theundoped silicon oxide layer. However adhesion improvement would onlyrequire ultrathin layers, which would not be sufficient to alter etchselectivity. Also, to be substantially free of carbon, a separatedeposition step with different chemical precursors would be required.

As described in U.S. Pat. No. 6,570,256 a graded carbon layer can beemployed within the initial region of a carbon-containing organosilicatelayer to improve adhesion to the underlying substrate. However this maynot necessarily provide the requisite properties of the organosilicatefilm near the interface, in particular with respect to adhesion andcohesive strength. If an oxide-like layer is desired within theorganosilicate film, there is no means provided to achieve that.

It would thus be further highly desirable to provide a semiconductordevice structure and method for manufacturing an insulating structurecomprising a multitude of dielectric and conductive layers with improvedinterfacial strengths between SiCOH layers and other layers in theinterconnect structure. It would also be highly desirable to achievethese improved interfacial strengths without introducing additionalchemical precursors that would themselves deposit other materialsbesides the desired SiCOH low-k insulator material, and would allowcontinuous grading of the interfaces. It would also be highly desirableto achieve the above without introducing additional separate depositionsof other film layers.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide aninsulating structure comprising a multitude of dielectric and conductivelayers with good interfacial strength between the different layers. Theterm “good interfacial strength” as used throughout this applicationdenotes an interfacial strength of greater than 50% of the cohesivestrength of the weaker of the two materials on either side of theinterface.

It is a further object of the present invention to provide an insulatingstructure comprising a multitude of dielectric and conductive layerswherein the interfacial strength between SiCOH and other differentlayers is enhanced by starting the deposition of the new layer in aplasma reactor while a surface preparation plasma of the prior film's isstill active, stopping the surface preparation plasma after apredetermined time and converting the plasma conditions for thedeposition of the new film. A transition layer is formed by theinventive process between the previous surface and new dielectric layer,which enhances the adhesion between the previous surface and the newdielectric layer. The cohesive strength of this transition layer isitself enhanced by the use of an oxygen-bearing organosilicate precursorsuch as a cyclic siloxane, such that the transition plasma conditionscan generate a carbon-depleted silicon oxide-like material restricted towithin several nm of the interface.

It is another object of the present invention to provide an insulatingstructure comprising a multitude of dielectric and conductive layerswherein the surface preparation plasma may be a surface oxidation, anoxygen-containing plasma, a surface cleaning plasma of an inert gas,such as Ar or He, or any of the aforementioned plasmas furthercontaining other elements, such as N, H and/or F.

It is another object of the present invention to provide an insulatingstructure comprising SiCOH layers with enhanced interfacial strength toother layers including, for example, SiN, SiC, SiCN, SiCH, SiCNH, SiO₂,tetraethylorthosilicate (“TEOS”), phosphorus silicate glass (“PSG”) orboron phosphorus silicate glass (“BPSG”).

It is yet another object of the present invention to provide anelectronic device structure incorporating layers of insulating andconductive materials as intralevel or interlevel dielectrics in aback-end-of-the-line (“BEOL”) wiring structure in which the adhesionbetween different dielectrics is enhanced through a transition layerformed by starting the deposition of the new layer in a plasma reactorwhile the surface preparation plasma of the prior film is still active,stopping the surface preparation plasma after a predetermined time andconverting the plasma conditions for the deposition of the new film.BEOL wiring structures may also be referred to herein as an interconnectstructure.

It is yet another object of the present invention to provide anelectronic device structure in which the interfacial strength between aSiCOH layer and a SiCH or SiCNH layer is at least 4 J/m², and preferablyequal to the cohesive strength of the SiCOH film itself (typically 6 μm²for k=2.9 material) as measured by a four point bending test calibratedsuch that the cohesive strength of SiO₂ deposited by a silane process ismeasured as 10 J/m².

It is another object of the present invention to provide an insulatingsemiconductor structure comprising a multitude of dielectric andconductive layers wherein the interfacial strength between differentlayers is enhanced by starting the deposition of a new layer in a plasmareactor while the surface preparation plasma of the prior film's isstill active, stopping the surface preparation plasma after apredetermined time and converting the plasma conditions for thedeposition of the new film.

According to the principles of the invention, there is provided a methodfor fabricating a BEOL interconnect structure comprising SiCOH layerswith enhanced interfacial strength to other layers of the interconnectincluding, for example, layers of SiN, SiC, SiCN, SiCH, SiCNH, SiO₂,TEOS, PSG or BPSG.

In one embodiment, a structure having a surface comprising areas ofpatterned metals and areas of SiCH or SiCHN dielectrics is placed into aPECVD reactor and then the structure is exposed to an Ar plasma for afirst time period. After the first time period, the precursor used forthe deposition of the SiCOH film is introduced in the reactor while theAr plasma is still active for a second time period. The Ar flow is theninterrupted and the plasma conditions are adjusted for the growth of theSiCOH film for a third period of time.

In another aspect of the invention, there is provided a method forfabricating a multilayered structure with strong interfacial strengthbetween the different layers comprising the steps of: introducing amultilayered structure having at least one surface comprising areas ofpatterned metals and areas of SiCH or SiCHN dielectrics into a PECVDreactor; exposing the surface to an Ar plasma for a first time period;introducing precursors for deposition of a SiCOH film into the reactor,while the Ar plasma is still active; and interrupting the Ar plasma andadjusting plasma conditions for growth of the SiCOH film.

In another embodiment, the steps of exposing to Ar plasma, introducingprecursors for deposition of a SiCOH film, while maintaining plasmaactive, and interrupting and adjusting are repeated any number of times.

In a different embodiment, the Ar pretreatment plasma is replaced by asurface oxidation, an oxygen-containing plasma, He plasma or any of thesame, including the Ar plasma, containing other elements such as N, Hand/or F.

In still another embodiment of the present invention, the structure isintroduced into a PECVD reactor were the surface of the structurecomprises areas of patterned metals and areas of SiCH or SiCHNdielectrics. This structure is then exposed to a surface cleaning orpreparation plasma for a certain period of time. The surface cleaningplasma is stopped and a mixture containing the precursors used for thedeposition of the SiCOH films with Ar, He, oxygen, NH₃, SiH₄ andmixtures thereof is introduced into the reactor and a plasma isinitiated for the deposition of the film. The surface cleaning plasmamay optionally include fluorine. After a first period of time, the flowof the additives to the precursors of the film is stopped and thedeposition of the film is continued for a second period of time. In thisembodiment, the first period of time is significantly smaller than thesecond period of time.

The interfacial strength enhancing method can be used in theback-end-of-the-line (BEOL) structure of a CMOS or DRAM device toimprove the adhesion between a low-k dielectric, e.g., SiCOH, andhardmask or diffusion barrier dielectrics such as SiCH or SiCHN.

The present invention is further directed to an electronic devicestructure which has layers of insulating materials as intralevel orinterlevel dielectrics in a back-end-of-the-line (“BEOL”) interconnectstructure which includes a pre-processed semiconducting substrate thathas a first region of metal embedded in a first layer of insulatingmaterial, a first region of conductor embedded in a second layer ofinsulating material, a transition layer between the second layer ofinsulating material and first layer of insulating material, the firstregion of conductor is in electrical contact with the first region ofmetal, and a second region of conductor is in electrical contact withthe first region of conductor and is embedded in a third layer ofinsulating material, the third layer of insulating material contactingwith the second layer of insulating material. The electronic devicestructure may further comprise a dielectric cap layer situated inbetween the second layer of insulating material and the third layer ofinsulating material and including transition layers between the caplayer and the second and optionally the third insulating layers.

The electronic device structure may further comprise a first dielectriccap layer between the second layer of insulating material and the thirdlayer of insulating material, and a second dielectric cap layer on topof the third layer of insulating material and containing transitionlayers between the cap layers and the insulating layers.

The dielectric cap material can be selected from silicon oxide, siliconnitride, silicon oxynitride, a refractory metal silicon nitride (whereinthe refractory metal is selected from the group consisting of Ta, Zr, Hfand W), silicon carbide, carbon doped oxide or SiCOH and theirhydrogenated compounds. The first and the second dielectric cap layersmay be selected from the same group of dielectric materials. The firstlayer of insulating material may be silicon oxide or silicon nitride ordoped varieties of these materials, such as phosphorus silicate glass(“PSG”) or boron phosphorus silicate glass (“BPSG”), TEOS, SiC, SiCN,SiCH, or SiCNH. The second and subsequent dielectric layers may be PECVDdeposited SiCOH or spin-on deposited dielectrics.

The electronic device structure may further include a diffusion barrierlayer of a dielectric material deposited on at least one of the secondand third layers of insulating material with a graded transitionadhesion layer. The electronic device structure may further comprise adielectric on top of the second layer of insulating material, which actsas a reactive ion etch (“RIE”) hardmask and polish stop layer and adielectric diffusion barrier layer on top of the dielectric RIE hardmaskand polish stop layer, with an intermediate adhesion layer between saidtop dielectric and said second layer of insulating material. Theelectronic device structure may further comprise a first dielectric RIEhardmask/polish-stop layer on top of the second layer of insulatingmaterial, a first dielectric RIE hardmask/diffusion barrier layer on topof the first dielectric polish-stop layer, a second dielectric RIEhardmask/polish-stop layer on top of the third layer of insulatingmaterial, and a second dielectric diffusion barrier layer on top of thesecond dielectric polish-stop layer with transition layers between twolayers of different materials. The electronic device structure mayfurther comprise a dielectric cap layer of same materials as mentionedabove, between an interlevel dielectric and an intralevel dielectric.

Advantageously, the method for improving the adhesion between thedifferent layers of an electronic device structure described above isimplemented in a back-end-of-the-line (“BEOL”) wiring process.

The transition layer of the present invention is unlike prior artadhesion layers in that it contains the same elements as the next layerhowever at different concentrations and it may contain additionalelements. The transition layer is typically characterized by a reduced Ccontent and enhanced 0 content as compared to the following SiCOH layer.The transition layer of the present invention is self limited to lessthan ˜10 nm from the interface. In some embodiments of the presentinvention in which SiCOH is being deposited, the transitional layer maybe oxygen rich and/or carbon-depleted as compared to the SiCOH layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other objects, features, and advantages of theinvention will be apparent from the following detailed description ofthe invention, as illustrated in the accompanying drawings, in which:

FIG. 1 depicts an enlarged, cross-sectional view of a prior artelectronic device having two layers of metallization in the BEOLaccording to the current state of the art.

FIG. 2 depicts the structure of FIG. 1 with a transition layer betweenthe dielectrics of the two-metallization levels according to the presentinvention.

FIG. 3 depicts an enlarged, cross-sectional view of the electronicdevice structure of FIG. 2 having an additional diffusion barrierdielectric cap layer on top of the intralevel dielectric and transitionlayers between the diffusion barrier and the intralevel and interleveldielectrics according to the present invention.

FIG. 4 depicts an enlarged, cross-sectional view of the electronicdevice structure of FIG. 3 having an additional RIE hardmask/polish-stopdielectric cap layer and dielectric cap diffusion barrier on top of thepolish-stop layer with transition layers between the differentdielectric layers according to the present invention.

FIG. 5 depicts an enlarged, cross-sectional view of the electronicdevice structure of FIG. 4 having additional RIE hardmask/polish-stopdielectric layers on top of the interlevel dielectric material film withtransition layers between the different dielectric layers according tothe present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention discloses a structure with improved interfacialstrength between different layers of insulating or conductive materials.The improved interfacial strength is obtained in the present inventionby forming thin transition layers between the different pairs of layers.The transition layer is formed while the plasma of a surfacepretreatment step is still present and active in the reactor chamber atthe same time the precursors of the film that is being deposited areintroduced into the reactor chamber. The results are optimized in thecase of siloxane or other oxygen-bearing organo-silicon precursors.

The present invention provides a method for improving the interfacialstrength among different layers of insulating or conductive materialsusing thin transition layers between each of the different layers.

The transition layer of the present invention may be used to improve theinterfacial strength between a PECVD deposited SiCOH dielectric andanother dielectric such as Si-based SiCH, SiCNH, silicon oxide, siliconnitride, or organic dielectrics, or between any two dielectric layerscomprising the aforementioned dielectrics. The dielectric layers may bethe main interconnect dielectric, a cap, or a hardmask layer in theback-end-of-the-line interconnect structure of an integrated circuit.While the transition layer may have a different dielectric constant thanthe following dielectric, it is formed as a very thin layer as comparedto the thickness of the dielectric layers, therefore its contribution tothe effective dielectric constant is negligible. The transition layer ofthe present invention may also be used to improve the adhesion orinterfacial strength between a metal or metal nitride and any dielectriclayer selected from the aforementioned group.

The electronic devices formed according to the present invention areshown in FIG. 2-5; FIG. 1 is a prior art electronic device. It should benoted that the devices shown in FIGS. 2-5, are merely illustrated asexamples according to the present invention, while countless otherdevices can also be formed according to the present invention.

FIG. 1 depicts electronic device 30 that is built on a silicon substrate32 according to the current state of the art; FIG. 1 is representativeof the Prior Art and thus is labeled accordingly. On top of siliconsubstrate 32, insulating material layer 34 is formed with a first regionof metal 36 embedded therein. After a chemical mechanical polishing(“CMP”) process is conducted on first region of metal 36, a film such asa dielectric film 38, having preferably a dielectric constant less thanSiO₂, is deposited on top of first layer of insulating material 34 andfirst region of metal 36. First layer of insulating material 34 may besuitably formed of silicon oxide, silicon nitride, doped varieties ofthese materials, or any other suitable insulating material. Dielectricfilm 38 is patterned by a photolithography process and conductor layer40 is deposited therein. After a CMP process on first conductor layer 40is carried out, second layer of dielectric film 44 is formed overlyingfirst dielectric film 38 and first conductor layer 40. Conductor layer40 may be a deposit of a metallic conductive material or a non-metallicconductive material. For instance, a metallic conductive material ofaluminum or copper, or a non-metallic material such as nitride orpolysilicon may be utilized. The first conductor 40 is in electricalcommunication with the first region of metal 36.

As further depicted in FIG. 1, a second region of conductor 50 is formedafter a photolithographic process in the second dielectric film layer44, followed by a process for depositing the second conductor material.Second conductor 50 may also be a deposit of either a metallic materialor a non-metallic material, similar to that used in depositing the firstconductor layer 40. The second region of conductor 50 is in electricalcommunication with the first region of conductor 40 and is embedded inthe second layer of dielectric insulator 44. The second layer ofdielectric film 44 is in intimate contact with the first layer ofinsulating material 38. In this specific example, the first layer ofinsulating material 38 serves as an intralevel dielectric material,while the second layer of insulating material, i.e., the dielectric film44, serves as both an intralevel and an interlevel dielectric.

FIG. 2 depicts electronic device 130 that is built on a siliconsubstrate 32 according to the present invention. After the formation ofinsulating material layer 34 with the embedded first region of metal 36,a thin transition layer 100, approximately 1 to about 100 nm thick,preferably about 10 to about 20 nm thick, is formed on top of layers 34and 36. The process then continues as described with reference to FIG.1.

FIG. 3 depicts electronic device 60 according to the present invention,similar to that of electronic device 130 shown in FIG. 2, but withadditional dielectric cap layer 62 deposited between first insulatingmaterial layer 38 and second insulating material layer 44. Dielectriccap layer 62 can be suitably formed of a material such as, for example,silicon oxide, silicon nitride, silicon oxynitride, silicon carbide(SiC), silicon carbide containing nitrogen (SiCN), silicon carbo-oxide(SiCO), modified SiCOH and their hydrogenated compounds, as well asrefractory metal silicon nitride, wherein the refractory metal isselected the group consisting of Ta, Zr, Hf, and W. Additionally,dielectric cap layer 62 functions as a diffusion barrier layer forpreventing diffusion of first conductor layer 40 into second insulatingmaterial layer 44.

In one embodiment of the present invention, the adhesion between caplayer 62 and dielectric layer 38 is enhanced by the transition layer102. In another embodiment, the adhesion between dielectric layer 44 andcap layer 62 is enhanced by the transition layer 104. In yet anotherembodiment, the adhesion between cap layer 62 and dielectric layer 38 isenhanced by the transition layer 102 and the adhesion between dielectriclayer 44 and cap layer 62 is enhanced by the transition layer 104.

FIG. 4 depicts another alternate embodiment of electronic device 70according to the present invention. In electronic device 70, twoadditional dielectric cap layers 72 and 74 that act as an RIE mask andCMP (chemical-mechanical polishing) polish stop layer are used. Firstdielectric cap layer 72 is deposited on top of first insulating materiallayer 38. The function of dielectric layer 72 is to provide an end pointfor the CMP process utilized in planarizing first conductor layer 40.Polish stop layer 72 can be a deposit of a suitable dielectric materialsuch as, for example, silicon oxide, silicon nitride, siliconoxynitride, silicon carbide (SiC), silicon carbide containing nitrogen(SiCN), silicon carbo-oxide (SiCO), modified SiCOH and theirhydrogenated compounds, as well as refractory metal silicon nitride,wherein the refractory metal is selected from the group consisting ofTa, Zr, Hf, Ti and W. The top surface of dielectric layer 72 is at thesame level as first conductor layer 40.

In one embodiment, the interfacial strength between cap layer 72 anddielectric layer 38 is enhanced by the transition layer 106. In anotherembodiment, the interfacial strength between dielectric layer 62 and caplayer 72 is enhanced by the transition layer 102. In yet anotherembodiment, the interfacial strength between cap layer 72 and dielectriclayer 38 is enhanced by the transition layer 106 and the interfacialstrength between dielectric layer 62 and layer 72 is enhanced by thetransition layer 102.

A second dielectric layer 74 can be added on top of second insulatingmaterial layer 44 for the same purposes. In one embodiment, theinterfacial strength between layer 74 and dielectric layer 44 isenhanced by the transition layer 108.

FIG. 5 depicts still another alternate embodiment of electronic device80 according to the present invention. In this alternate embodiment, anadditional layer of dielectric 82 is deposited and thus divides secondinsulating material layer 44 into two separate layers 84 and 86.Intralevel and interlevel dielectric layer 44, as depicted in FIG. 4, istherefore divided into interlayer dielectric layer 84 and intraleveldielectric layer 86 at the boundary between interconnect 92 andinterconnect 94, as depicted in FIG. 5. An additional diffusion barrierlayer 96 is further deposited on top of the upper dielectric layer 74.The additional benefits provided by this alternate embodiment of theelectronic structure 80 is that the dielectric layer 82 acts as a RIEetch stop providing superior interconnect depth control.

In one embodiment, the interfacial strength between layer 82 anddielectric layer 84 is enhanced by the transition layer 110. In anotherembodiment, the interfacial strength between layer 86 and layer 82 isenhanced by the transition layer 112. In yet another embodiment, theinterfacial strength between cap layer 82 and dielectric layer 84 isenhanced by the transition layer 110 and the interfacial strengthbetween dielectric layer 86 and layer 82 is enhanced by the transitionlayer 112. In another embodiment, the interfacial strength between thediffusion layer 96 and dielectric layer 74 is enhanced by the transitionlayer 114. In yet another embodiment, the interfacial strength betweendielectric 74 and intralevel dielectric 86 is enhanced by the transitionlayer 108.

In any of the embodiments mentioned above, the transition layer may beoxygen rich and/or carbon-depleted, for example preparing it withaddition of oxygen to the plasma feed during its preparation, or may bea result of the plasma condition during its deposition, especially inthe case of siloxane precursors.

The transition layers in each of FIGS. 2-5 are formed utilizing themethod of the present invention. As stated above, each transition layertypically has a thickness of from about 1 nm to about 100 nm, with athickness of from about 5 to about 20 nm being more highly preferred.Specifically, the inventive method begins with positioning a substratesuch as an interconnect structure into a reactor chamber in which aplasma can be generated. Suitable reactors include: plasma enhancedchemical vapor deposition reactors, high-density plasma reactors,sputtering chambers, and ion beam chambers. The reactor is evacuated andthen the substrate is heated to a temperature of about 400° C. or less.Preferably, the substrate is heated to a temperature of from about 200°C. to about 400° C.

Next, the substrate is subjected to a surface pretreatment step in whichat least one surface pretreatment gas is flown into the reactor at whichtime it is converted into a plasma. The at least one surfacepretreatment gas that can be used in the surface pretreatment stepincludes an inert gas such as Ar, Ne, He, Xe and Kr; H₂; NH₃; O₂; SiH₄and O₂; and mixtures thereof. In some embodiments, F atoms may also beintroduced into the feed gas. The flow rate of the surface pretreatmentgas may vary depending on the reactor system and the type of gas beingintroduced. The chamber pressure can range anywhere from 0.05 to 20torr, but the preferred range of pressure operation is 1 to 10 torr. Thesurface pretreatment step occurs for a first period of time, which istypically from about 0.08 to about 2 min.

An RF power source is typically used to generate a plasma of the surfacepretreatment gas. The RF power source may operate at either the highfrequency range (on the order of about 100 W or greater); the lowfrequency range (less than 250 W) or a combination thereof may beemployed. The high frequency power density can range anywhere from 0.1to 2.0 W/cm² but the preferred range of operation is 0.2 to 1.0 W/cm².The low frequency power density can range anywhere from 0.0 to 1.0 W/cm²but the preferred range of operation is 0.2 to 0.5 W/cm². The chosenpower levels must be low enough to avoid significant sputter etching ofthe exposed dielectric surface (<5 nanometers removal).

At this point of the process, a flow of precursors gases for the nextlayer, such as precursors for SiCOH dielectric deposition, areintroduced into the reactor. The reactor at this point thus contains aplasma of the surface pretreatment gases still present and active withinthe reactor, yet the next layer's precursors gases are being introduced.The flows of the precursor gases into the reactor may vary and aredependent on the chemical and physical make-up of the layer that isbeing deposited. The flows of precursor reactants into the reactor occurfor a second period of time, which is typically from about 0.03 to about0.5 min. During the transition of these process steps, it is preferred,although may not be absolutely critical, to maintain a constant chamberpressure by allowing the throttle valve position to adjust due to thechange of process gas flows. It is also preferred, but again may not beabsolutely critical, to maintain the same power levels during thetransition of these process steps in order to provide a morereproducible layered film.

After the second period of time, the flows of the gases used for thesurface preparation are stopped, and the plasma conditions for theprecursor gases are adjusted for the deposition of the next layer. Thegrowth of the next layer occurs for a third period of time, which istypically from about 0.15 to about 5 min.

The above processing steps of the present invention may be repeated anynumber of times to provide a multilayered structure in which eachsuccessively deposited layer has a transition layer therebetween.

The layer that is being deposited after the surface pretreatment step ispreferably a SiCOH type dielectric of low dielectric constant (k<3.2) orultralow dielectric constant (k<2.4) and the substrate is aninterconnect structure having an upper layer of a dielectric materialsuch as SiCHN on which the transition layer and then the SiCOH typedielectric are formed thereon.

Qualitatively, the interfacial strength provided by the transition layerof the present invention is strong enough to prevent delamination orcohesive failure near the interface of the interconnect structure duringfabrication and reliability testing. In one example, as determined in afour-point bending test known amongst skilled artisans, interfacialstrength between SiCOH to SiCHN has been demonstrated to increase byalmost a factor of three (3), from about 2.2 joule/m² to about 6.0Joule/m². The method and electronic structures formed according to thepresent invention have therefore been thoroughly demonstrated in theabove descriptions and in the drawings of FIGS. 2-5. It should beemphasized that the examples of the electronic structures shown in FIGS.2-5 are merely used to illustrate the inventive method that can beapplied in the fabrication of countless electronic devices.

The following examples are presented to illustrate the fabrication ofthe dielectric film including the transition layer in accordance withthe present invention as well as to demonstrate advantages that can beobtained therefrom.

EXAMPLE 1

In this example, a wafer containing an electronic structure (i.e.,substrate) having an upper layer of first dielectric with metalstructures embedded in it was inserted in a plasma enhanced chemicalvapor deposition (“PECVD”) reactor. The wafer was then heated to atemperature between room temperature and 450° C. In typical conditions,the wafer was heated to 180° C. Argon (Ar) was then flown into thereactor. In one example, Ar was flown into a 8″ the reactor at a rate of30 sccm to achieve a pressure of 100 mTorr. A high frequency RF powersource connected to the substrate holder was then turned on to about60.0 W for 0.5 to 2 minutes. In a different example, the RF powergenerated was operated under bias control at a bias of −250 VDC. Withoutinterrupting the plasma, the precursor mixture used for the depositionof the next dielectric film was then flown into the reactor keeping thepower and pressure unchanged until the flow was stabilized an then foran additional 5-15 seconds. The Ar flow was then shut off and the plasmaconditions were adjusted for the deposition of the dielectric. Thedielectric can be SiCOH. This achieved an interfacial strength of 5.8J/m ² between SiCOH and SiCNH.

EXAMPLE 2

In this example, a wafer containing an electronic structure (i.e.,substrate) having an upper layer of first dielectric with metalstructures embedded in it was inserted in a 300 mm PECVD reactor. Thewafer was heated to 350° C. Ar was then flown into the reactor at 900sccm to achieve a pressure of 4 torr. A high frequency RF power sourcewas then turned on to about 300 W and a low frequency RF source to about150 W for about 20 seconds. Without interrupting the plasma, theprecursor mixture used for the deposition of the next dielectric filmwas then flown into the reactor and the power and pressure conditionswere adjusted for the deposition of the SiCOH dielectric. The flow of Arwas maintained for an additional 5-15 seconds after which it was turnedoff and the deposition of the dielectric continued until the requiredthickness was obtained. This achieved an interfacial strength of 4.3J/m² between SiCOH and SiCNH.

In these examples, TEM/EELS, Auger, and SIMS data confirm a modificationof the interface and SiCOH film within ˜10 nm wherein this transitionlayer is sharply carbon -depleted (but not zero) and sharply SiO rich,with a plateau of slightly carbon-depleted material immediately prior tothe steady state bulk region. By contrast a control sample with poorinterfacial strength shows no carbon depletion and no SiO-rich spike,and in fact shows a carbon overshoot at or near the interface.

EXAMPLE 3

In a different example, the procedure is similar to that in Example 1 orExample 2 but the pretreatment gas was He, O₂, NH₃, or mixtures of Ar orHe with O₂, H₂, NH₃, SiH₄.

During the second time period in the examples described above, atransition dielectric film was deposited under the additional influenceof the pretreatment gas. This influence can be physical ion bombardmentif the pretreatment gas was inert, such as Ar, or it can be physico-chemical if the pretreatment gas mixture contained reactive gases suchas O₂.

EXAMPLE 4

In this example, a wafer containing an electronic structure (i.e.,substrate) having an upper layer of a first dielectric with metalstructure embedded in it was inserted into a 300 nm PECVD reactor. Thewafer was heated to 350° C. and then Ar was flown into the reactor at900 seem to achieve a pressure of 4 torr. A high frequency RF powersource was then turned on to about 300 W and a low frequency RF sourceto about 150 W for about 20 seconds. The plasma was interrupted and aflow of the precursor gas mixture used for the deposition of the nextdielectric film with the addition of Ar at a flow of 900 sccm wasintroduced into the reactor. A plasma was initiated at conditionsadjusted from the deposition of the SiCOH dielectric. After 2-15seconds, the Ar flow was turned off and the deposition of the dielectricwas continued until the required thickness was obtained. Oxygen may beadded to the Ar during the initial 2-15 seconds.

While several embodiments of the invention, together with modificationsthereof, have been described in detail herein and illustrated in theaccompanying drawings, it will be evident that various furthermodifications are possible without departing from the scope of theinvention. Nothing in the above specification is intended to limit theinvention more narrowly than the appended claims. The examples given areintended only to be illustrative rather than exclusive.

1. A semiconductor structure comprising: an insulating material having ametal region comprised of Cu embedded therein located on a surface of asubstrate; a transition adhesion layer located on an upper surface andsaid insulating material, but not extending onto an upper surface ofsaid metal region; and a dielectric layer comprising a carbon-dopedoxide including atoms of Si, C, O and H located on an upper surface ofsaid transition adhesion layer and in direct contact with at least aportion of the metal region, wherein said transition adhesion layerincludes at least atoms of Si, C, O and H and is oxygen rich, carbondepleted or both oxygen rich an carbon depleted as compared to thedielectric layer.
 2. The semiconductor structure of claim 1 wherein saiddielectric layer includes metal structures embedded therein.
 3. Thesemiconductor structure of claim 1 wherein said insulating material isselected from the group consisting of SiO₂, TEOS, carbon doped glasses,carbon doped oxides, silicon oxycarbide, SiCOH, SiC, SiCN, SiCH, SiCNH,organic dielectrics and hybrid dielectrics.
 4. An electronic devicestructure having layers of insulating material functioning as intralevelor interlevel dielectrics comprising: a semiconductor substrate having afirst region of metal embedded in a first layer of insulating material;a second layer of insulating material including a first region ofconductor embedded therein, said second layer of insulating material isseparated from said first layer of insulating material by a transitionadhesion layer, said first region of conductor is in electricalcommunication with said first region of metal and said transitionadhesion layer does not extend onto an upper surface of said firstregion of conductor embedded in said first layer of insulting material;and a third layer of insulating material including a second region ofconductor comprised of CU embedded therein, said second region ofconductor is in electrical communication with said first region ofconductor, wherein said third layer of insulating material is acarbon-doped oxide including atoms of Si, C, O and H and said transitionadhesion layer is located directly between the first layer of insulatingmaterial and the second layer of insulting material and comprises atleast atoms of Si, C, O and H and is oxygen rich, carbon depleted orboth oxygen rich and carbon depleted as compared with said second layerof insulating material.
 5. The electronic device of claim 4 furthercomprising a dielectric cap layer situated between said second layer ofinsulating material and said third layer of insulating material, saiddielectric cap layer being separated from said second layer by a secondtransition adhesion layer that is oxygen rich, carbon depleted or bothoxygen rich and carbon depleted as compared with said dielectric caplayer, and includes elements that are at least present in saiddielectric cap layer.
 6. The electronic device structure of claim 5further comprising a third transition adhesion layer that is oxygenrich, carbon depleted or both oxygen rich and carbon depleted ascompared with said third layer of insulating material, and includeselements that are at least present in said third layer of insulatingmaterial between said dielectric cap layer and said third layer ofinsulating material.
 7. The electronic device structure of claim 4further comprising: a first dielectric cap layer between said secondlayer of insulating material and said third layer of insulatingmaterial; and a second dielectric cap layer on top of said third layerof insulating material.
 8. The electronic device structure of claim 7further comprising another transition adhesion layer between seconddielectric cap layer and said third layer of insulating material,wherein said another transition adhesion layer is oxygen rich, carbondepleted or both oxygen rich and carbon depleted, and includes elementsthat are at least present in said third layer of insulting material. 9.The electronic device structure of claim 4 further comprising adiffusion barrier layer of a dielectric material deposited on at leastone of said second layer of insulating material and said third layer ofinsulating material.
 10. The electronic device structure of claim 9further comprising another transition adhesion layer between saiddiffusion barrier layer and said second layer of insulating material andsaid third layer of insulating material, wherein said another transitionadhesion layer is oxygen rich, carbon depleted or both oxygen rich andcarbon depleted as compared to said diffusion barrier layer, andincludes elements that at least present in said diffusion barrier layer.11. The electronic device structure of claim 4 further comprising adielectric reactive ion etching (RIE) hardmask/polish stop layer on topof said second layer of insulating material, and a dielectric diffusionbarrier layer on top of said RIE hardmask/polish stop layer.
 12. Theelectronic device structure of claim 11 further comprising a secondtransition adhesion layer between said dielectric reactive ion etching(RIE) hardmask/polish stop layer and said second layer of insulatingmaterial, and a third transition adhesion layer between said dielectricdiffusion barrier layer and said RIE hardmask/polish stop layer, saidsecond transition adhesion layer in oxygen rich, carbon depleted or bothoxygen rich and carbon depleted as compared with said dielectricreactive ion etching (RIE) hardmask/polish stop layer, and includeselements that are present in the dielectric reactive ion etching (RIE)hardmask/polish stop layer and said third transition adhesion layer isoxygen rich, carbon depleted or both oxygen rich and carbon depleted ascompared with said dielectric diffusion barrier layer and includeelements that are present in the said dielectric diffusion barrierlayer.
 13. The electronic device structure of claim 4 further comprisinga first dielectric RIE hardmask/polish stop layer on top of said secondlayer of insulating material; a first dielectric diffusion barrier layeron top of said first dielectric RIE ardmask/polish stop layer; a seconddielectric RIE hardmask/polish stop layer on top of said third layer ofinsulating material; and a second dielectric diffusion barrier layer ontop of said second dielectric RIE hardmask/polish stop layer.
 14. Theelectronic device structure of claim 13 further comprising a secondtransition adhesion layer between said first dielectric RIEhardmask/polish stop layer and said first dielectric diffusion barrierlayer on top of said first dielectric RIE hardmask/polish stop layer,said second transition adhesion layer is oxygen rich, carbon depleted orboth oxygen rich and carbon depleted as compared with said firstdielectric diffusion barrier layer and includes elements that are leastpresent in said first dielectric diffusion barrier layer.
 15. Theelectronic device structure of claim 13 further comprising additionaltransition adhesion layers between said second dielectric RIEhardmask/polish stop layer and said second dielectric diffusion barrierlayer on top of said second dielectric RIE hardmask/polish stop layer,each additional transistor adhesion layer is oxygen rich, carbondepleted or both oxygen rich and carbon depleted as compared to a layerdirectly overlying each of said additional transition adhesion layers,and includes elements that are at least present in the layer directlyoverlying each of the transition layers.
 16. The semiconductor structureof claim 1 further comprising additional dielectric layers atop saiddielectric layer, each additional dielectric layer is adhered to theunderlying additional dielectric layer by an additional transitionlayer, each additional transition adhesion layer is oxygen rich, carbondepleted or both oxygen rich and carbon depleted as compared to eachadditional dielectric layer.